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GALLOX SEMICONDUCTORS INC.

Company Details

Name: GALLOX SEMICONDUCTORS INC.
Jurisdiction: New York
Legal type: FOREIGN BUSINESS CORPORATION
Status: Active
Date of registration: 18 Dec 2023 (a year ago)
Entity Number: 7408205
ZIP code: 14853
County: Tompkins
Place of Formation: Delaware
Foreign Legal Name: GALLOX SEMICONDUCTORS INC.
Address: 350 duffield hall, ITHACA, NY, United States, 14853

DOS Process Agent

Name Role Address
the corporation DOS Process Agent 350 duffield hall, ITHACA, NY, United States, 14853

Filings

Filing Number Date Filed Type Effective Date
240829002334 2023-12-18 APPLICATION OF AUTHORITY 2023-12-18

USAspending Awards / Financial Assistance

Date:
2025-01-21
Awarding Agency Name:
National Science Foundation
Transaction Description:
STTR PHASE I: HARNESSING GALLIUM OXIDE FOR HIGH-EFFICIENCY POWER CONVERSION IN DATA CENTERS - EVALUATION OF GALLIUM OXIDE POWER DEVICES IN POWER CONVERTERS -THE BROADER IMPACT/COMMERCIAL IMPACTS OF THIS SMALL BUSINESS TECHNOLOGY TRANSFER (STTR) PHASE I PROJECT IS TO ADDRESS THE INEFFICIENCIES THAT EXIST WITHIN POWER ELECTRONICS. POWER ELECTRONICS IS THE USE OF COMPONENTS AND CIRCUITS TO MODIFY THE VOLTAGE TO MAKE IT USABLE. ELECTRICITY GOES THROUGH MANY POWER CONVERSION STEPS UNTIL CHARGING A COMPUTER WITH A CUMULATIVE EFFICIENCY OF <80%. BY USING NEW SEMICONDUCTOR MATERIALS, THESE POWER CONVERSION STEPS CAN BE MADE MORE EFFICIENT. BY MAKING POWER ELECTRONICS MORE EFFICIENT, SIGNIFICANT COST SAVINGS CAN BE REALIZED, MAKING A POSITIVE ECONOMIC AND ENVIRONMENTAL IMPACT. THE BENEFITS OF THIS TECHNOLOGY ARE MOST OBVIOUS WITHIN HIGH POWER OR HIGH-POWER DENSITY APPLICATIONS. ELECTRIC VEHICLE CHARGING INFRASTRUCTURE, SOLAR FARMS, AND INDUSTRIAL APPLICATIONS ARE COMMERCIAL USE CASES THAT WILL DIRECTLY BENEFIT IN ADDITION TO IMPORTANT DEFENSE APPLICATIONS FOR AEROSPACE AND WEAPON SYSTEMS. THIS SMALL BUSINESS TECHNOLOGY TRANSFER (STTR) PHASE I PROJECT WILL USE THE NEXT-GENERATION ULTRA-WIDE BANDGAP SEMICONDUCTOR GALLIUM OXIDE (GA2O3). WITH ITS LARGE BANDGAP AND THE AVAILABILITY OF HIGH-QUALITY NATIVE SUBSTRATES, GA2O3 CAN MEET EMERGING NEEDS THAT CURRENT MATERIALS CANNOT READILY ADDRESS. THROUGH THIS GRANT, THE PROJECT TEAM WILL ENHANCE THE PERFORMANCE OF SCALED-UP GA2O3 DEVICES BY REFINING THEIR DESIGN TO MINIMIZE LOSSES. THESE IMPROVED DEVICES WILL BE TESTED IN INDUSTRY-RELEVANT CIRCUITS, ALLOWING THE TEAM TO QUANTIFY THEIR ECONOMIC AND TECHNICAL ADVANTAGES. SUCH CIRCUIT-LEVEL DATA WILL BE INSTRUMENTAL IN IDENTIFYING THE OPTIMAL OPERATING CONDITIONS (E.G., VOLTAGE, POWER, FREQUENCY) FOR GA2O3-BASED DEVICES AND IN GUIDING FURTHER ENGINEERING EFFORTS. THIS AWARD REFLECTS NSF'S STATUTORY MISSION AND HAS BEEN DEEMED WORTHY OF SUPPORT THROUGH EVALUATION USING THE FOUNDATION'S INTELLECTUAL MERIT AND BROADER IMPACTS REVIEW CRITERIA.- SUBAWARDS ARE PLANNED FOR THIS AWARD.
Obligated Amount:
305000.00
Face Value Of Loan:
0.00
Total Face Value Of Loan:
0.00

Trademarks Section

Serial Number:
98544400
Mark:
GALLOX SEMICONDUCTORS
Status:
NOTICE OF ALLOWANCE - ISSUED
Mark Type:
TRADEMARK, SERVICE MARK
Application Filing Date:
2024-05-10
Mark Drawing Type:
Standard character mark
Mark Literal Elements:
GALLOX SEMICONDUCTORS

Goods And Services

For:
Custom manufacture of semiconductor devices
International Classes:
040 - Primary Class
Class Status:
Active
For:
Semiconductors
International Classes:
009 - Primary Class
Class Status:
Active

Date of last update: 19 Mar 2025

Sources: New York Secretary of State